Nanocomposite Insulators for Organic Thin-Film TransistorsMatt Panzer: Advisor: Daniel Frisbie (CEMS) |
| The search for novel
semiconductors to be used in flexible, inexpensive electronic applications
has recently led away from inorganics such as silicon in favor of organic
materials, which are solution-processable and offer favorable mechanical
properties. Not to be overlooked in the development of organic electronic
devices is the importance of the insulating gate dielectric material.
As the crucial layer that capacitively couples the semiconducting thin
film to the metallic gate electrode in an organic thin-film transistor
(OTFT), the gate insulator must satisfy several key requirements. In addition
to being thermally and chemically robust, a dependable OTFT insulating
layer should also exhibit a very low leakage current and be as planar
as possible to facilitate a favorable morphology in the subsequent deposition
of the semiconductor. While not mandatory for basic OTFT operation, the
creation of an insulator with a very large permittivity and low temperature,
solution-processability presents an exciting engineering challenge.
My initial efforts will focus on the nanocomposite system consisting of high-permittivity ceramic nanoparticles dispersed in a polymeric insulator matrix. This combination will allow me to study the effects of fill fraction, size distribution, and composition of the ceramic nanoparticles on nanocomposite insulator performance for a given host polymer; varying the choices of polymer matrix and casting solvent are other possibilities. Characterization and manipulation of structural and electronic properties on the nanoscale are of vital importance to the development of these nanocomposite insulating materials. An example end application for a high-permittivity, solution-processable insulator material could be the gate dielectric layer in a commercial OTFT-based electronic device (LCD screen, e.g.) that has the potential to be both flexible and low-cost. |
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